Preprint / Condensed Matter JINRP142004103 P142004103

The Effect of Uniaxial Static Pressure on the Behaviour of the Aluminum Acceptor Impurity in Silicon

Mamedov, T N ; Andreica, D ; Andrianov, D G ; Herlach, D ; Gorelkin, V N ; Gritsaj, K I ; Zhukov, V A ; Stoikov, A V ; Zimmermann, U

Published in: Pis'ma Zh. Eksp. Teor. Fiz.
Pages: 7 p
Year: 2004

Abstract: The results on the effect of uniaxial static pressure on the behaviour of aluminum shallow acceptors in silicon are presented. Impurity atoms of _{\mu}A1 in silicon crystals with phosphorus impurity (1.6\cdot 10^{13} cm^{3} for the first sample and 1.9\cdot 10^{13} cm^{3} for the second sample) were created by implantation of negative muons. The polarization of muons was studied in a magnetic field of 2.5 kGs transverse to the direction of the muon spin in the temperature range 10300 K. Orientations of the chosen crystal axis ([111] for the first sample, [100] for the second one), magnetic field, and the muon polarization were reciprocally perpendicular. It was found that uniaxial pressure applied along the chosen crystal axes changes both the absolute value and the temperature dependence of the acceptor center magnetic moment relaxation rate.

Language: rus

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 Record created 2010-10-01, last modified 2014-01-30

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