/ Instrumentation

Pulse-height defect in single-crystal CVD diamond detectors

Beliuskina, O. (Tokyo U., CNS, Saitama) ; Strekalovsky, A.O. ; Aleksandrov, A.A. ; Aleksandrova, I.A. ; Devaraja, H.M. ; Heinz, C. ; Heinz, S. ; Hofmann, S. ; Ilich, S. ; Imai, N. (Tokyo U., CNS, Saitama) ; Kamanin, D.V. (Dubna, JINR) ; Kis, M. (Darmstadt, GSI) ; Knyazheva, G.N. (Dubna, JINR) ; Kozhuharov, C. (Darmstadt, GSI) ; Kuznetsova, E.A. (Dubna, JINR) ; Maurer, J. (Darmstadt, GSI) ; Mishinsky, G.V. (Dubna, JINR) ; Pomorski, M. (Saclay) ; Pyatkov, Yu.V. (Dubna, JINR) ; Strekalovsky, O.V. (Dubna, JINR) ; Träger, M. (Darmstadt, GSI) ; Zhuchko, V.E. (Dubna, JINR)

Published in: Eur.Phys.J.
Year: 2017
Vol.: A53    Num./Issue: 2
Page No: 32
Year: 2017-02-22 published

Abstract: The pulse-height versus deposited energy response of a single-crystal chemical vapor deposition (scCVD) diamond detector was measured for ions of Ti, Cu, Nb, Ag, Xe, Au, and of fission fragments of$^{252}$ Cf at different energies. For the fission fragments, data were also measured at different electric field strengths of the detector. Heavy ions have a significant pulse-height defect in CVD diamond material, which increases with increasing energy of the ions. It also depends on the electrical field strength applied at the detector. The measured pulse-height defects were explained in the framework of recombination models. Calibration methods known from silicon detectors were modified and applied. A comparison with data for the pulse-height defect in silicon detectors was performed.

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DOI: 10.1140/epja/i2017-12223-8
 Record created 2017-03-02, last modified 2017-03-02

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