/ 25.40.Sc


200 and 300 MeV/nucleon nuclear reactions responsible for single-event effects in microelectronics


Jaderstrom, H. (Uppsala U.) ; Murin, Yu. (Dubna, JINR) ; Babain, Yu. (Khlopin Radium Inst.) ; Chubarov, M. (Khlopin Radium Inst.) ; Pljuschev, V. (Khlopin Radium Inst.) ; Zubkov, M. (Khlopin Radium Inst.) ; Nomokonov, P. (Dubna, JINR) ; Olsson, N. (Swedish Defence Res. Agency) ; Blomgren, J. (Uppsala U.) ; Tippawan, U. (Uppsala U.) ; Westerberg, L. (Uppsala U.) ; Golubev, P. (Lund U.) ; Jakobsson, B. (Lund U.) ; Geren, L. (Stockholm U.) ; Tegner, P.-E. (Stockholm U.) ; Zartova, I. (Stockholm U.) ; Budzanowski, A. (Cracow, INP) ; Czech, B. (Cracow, INP) ; Skwirczynska, I. (Cracow, INP) ; Kondratiev, V. (St. Petersburg Polytechnic Inst.) ; Tang, H.H.K. (IBM Watson Res. Ctr.) ; Aichelin, J. (Nantes U., LSN) ; Watanabe, Y. (Kyushu U.) ; Gudima, K.K. (IAP, Chisinau)

Published in: Phys.Rev.
Year: 2008
Vol.: C77
Page No: 044601
Pages: 12

Total numbers of views: 1215
Numbers of unique views: 409
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